| Type | NPN output | PNP output | |
|---|---|---|---|
| Model No. | NA1-PK3 | NA1-PK3-PN | |
| CE marking directive compliance | EMC Directive, RoHS Directive | ||
| Sensing height | 49.2 mm 1.937 in | ||
| Sensing range (Note 2) | 30 to 300 mm 1.181 to 11.811 in | ||
| Beam pitch | 24.6 mm 0.969 in | ||
| Number of beam channels | 3 beam channels | ||
| Sensing object | ø29 mm ø1.142 in or more opaque object (completely beam interrupted object) |
||
| Supply voltage | 12 to 24 V DC ± 10 % Ripple P-P 10 % or less | ||
| Current consumption | Emitter: 30 mA or less, Receiver: 50 mA or less | ||
| Output | NPN open-collector transistor ・ Maximum sink current: 100 mA ・ Applied voltage: 30 V DC or less (between output and 0 V) ・ Residual voltage: 1 V or less (at 100 mA sink current) 0.4 V or less (at 16 mA sink current) |
PNP open-collector transistor ・ Maximum source current: 100 mA ・ Applied voltage: 30 V DC or less (between output and +V) ・ Residual voltage: 1 V or less (at 100 mA source current) 0.4 V or less (at 16 mA source current) |
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